رشد و مشخصه‌یابی تک‌بلور پیزوالکتریک PIN-PMN-PT و ساخت تراشه با راستای بلورین [001] با استفاده از بلورنگاری پرتوی ایکس لاوه

نوع مقاله : مقاله پژوهشی

نویسندگان

مجتمع دانشگاهی علوم کاربردی نوین، دانشگاه صنعتی مالک اشتر، اصفهان، ایران.

چکیده

در این پژوهش، تک­بلور پیزوالکتریک PIN-PMN-PT با فرمول شیمیایی 24[Pb(Nb1/2In1/2)O3]-42[Pb(Mg1/3Nb2/3)O3-34PbTiO3، با قطر cm 2 و طول 8 سانتی­متر با روش رشد از مذاب بریجمن با موفقیت رشد داده شد. از آنجا که پاسخ پیزوالکتریکی قطعه­های تک­بلور به راستای بلورین آنها وابسته است، جهت­یابی بلوری شمش تک­بلور اهمیت زیادی دارد. شمش تک­بلور رشد داده شده با پراش پرتوی ایکس (XRD) به روش‌ بلورنگاری پرتوی ایکس لاوه به طور کامل بلورنگاری شد. نتایج نشان داد که بلور به دست آمده به صورت تک­بلور یکدست در راستای بلوری ]201[ رشد کرده است. زوایای دوران مناسب برای ساخت قطعه­ها در راستای بلوری مرجح ]001[  با استفاده از تحلیل نتایج لاوه استخراج گردید و قطعه­های تک­بلور از شمش جدا شد. دمای کوری نمونه­ی تک بلور برابر با 155 درجه سانتی­گراد بود که با استفاده از اندازه­گیری منحنی ثابت دی­الکتریک بر حسب دما استخراج گردید. تک­بلور رشد داده شده دارای ضریب بار پیزواکتریک pC/N 1090، ضریب جفت­شدگی الکترومکانیکی 49/0 و عامل کیفیت مکانیکی 135 بود. ثابت­های پیزوالکتریکی تک بلور رشد داده شده در مقایسه با سرامیک­های مرسوم مورد استفاده در کاربردهای پیزوالکتریکی دارای مقادیر بسیار بزرگی هستند.

کلیدواژه‌ها

عنوان مقاله [English]

Growth and characterization of PIN-PMN-PT piezoelectric single crystal and wafer fabrication in the [001] crystallographic direction using Laue X-ray crystallography

نویسندگان [English]

  • Hadi Papi
  • Mohsen Yazdanmehr
  • Hassan Ahmadvand
  • Hossein Karimi
faculty of Applied science, Malek Ashtar University of Technology, Isfahan, Iran
چکیده [English]

In this paper, PIN-PMN-PT piezoelectric single crystal with the chemical composition of 24[Pb(Nb1/2In1/2)O3]-42[Pb(Mg1/3Nb2/3)O3-34PbTiO3, with a diameter of 2 and a length of 8 cm was grown using the Bridgman growth method. Since the piezoelectric response of single crystals depends on their crystallographic orientation, the crystalography of single crystal ingots is of great importance. As grown single crystal ingot was completely investigated using X-ray diffraction by the Laue and XRD methods.The results showed that the obtained crystal was grown as a uniform single crystal along the [201] crystallographic direction. The appropriate rotation angles for manufacturing items along the preferred crystallographic direction [001] were extracted from the laue results, and single crystal pieces were cut from the ingot.The Curie temperature of the single crystal sample was 155 °C, which was extracted by measuring the dielectric constant curve as a function of temperature. The grown single crystal had a piezoelectric charge coefficient of 1090 pC/N, electromechanical coupling factor of 0.49, and mechanical quality factor of 135. The piezoelectric parameters of the grown single crystal have very large values ​​compared to conventional ceramics used in piezoelectric applications.

کلیدواژه‌ها [English]

  • single crystal
  • crystal growth
  • Bridgman
  • Crystallography
  • XRD
  • Laue
  • piezoelectric

مراجع

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  • تاریخ دریافت: 08 بهمن 1403
  • تاریخ بازنگری: 17 اسفند 1403
  • تاریخ پذیرش: 27 فروردین 1404

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