Crys ta l C rowth of Binary Semiconductors CdTe, CdSe, PbTe,
PbSc, find De t ermination or their Structural and Electrical
Parameters.
Abstract
Si ng le c rys t als o f bin a ry semico ndu c to rs
CdTc,CdSe. PhTe and PbSe were grown by sublimat ion and
condensa tion techniq ues usi ng argon as the carri e r gas.
Powder X-ray di ffractomet ry as wel l as La ue mClhod wcre
employed fo r the stru ct ura l a na lysis. By usi ng Ha ll
techniq ue. the de nsity and polarity of charge car rie rs we re
de te rmined in single crysta ls. PbTc and PbSc c rys ta ls were
grown as p-type wit h charge densi ty of about l.l x1Q 18 em·3
whereas CdTc and CdSe were grown as intrinsic. Thcrmo *
elcctric technique was also uliliscd to dc le rmine the e nergy
gap of single and polycrystals of CdTc and CdSc.
(2025). Crys ta l C rowth of Binary Semiconductors CdTe, CdSe, PbTe,
PbSc, find De t ermination or their Structural and Electrical
Parameters.. Iranian Journal of Crystallography and Mineralogy, 3(2), 101-112.
MLA
. "Crys ta l C rowth of Binary Semiconductors CdTe, CdSe, PbTe,
PbSc, find De t ermination or their Structural and Electrical
Parameters.", Iranian Journal of Crystallography and Mineralogy, 3, 2, 2025, 101-112.
HARVARD
(2025). 'Crys ta l C rowth of Binary Semiconductors CdTe, CdSe, PbTe,
PbSc, find De t ermination or their Structural and Electrical
Parameters.', Iranian Journal of Crystallography and Mineralogy, 3(2), pp. 101-112.
VANCOUVER
Crys ta l C rowth of Binary Semiconductors CdTe, CdSe, PbTe,
PbSc, find De t ermination or their Structural and Electrical
Parameters.. Iranian Journal of Crystallography and Mineralogy, 2025; 3(2): 101-112.
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