(Bi2Te3)0.96(Bi2Se3)0.04 crystal growth by zone melting method and the chemical composition variation study of the crystal in growth direction

Abstract

The (Bi2Te3)0.96(Bi2Se3)0.04 is an n-type thermoelectric semiconductor for using in thermoelectric cooling systems. Single crystal of this composition was grown by Zone Melting Method and thermoelectric power (α 2 σ) along the crystal growth where α is the Seebeck coefficient and σ is the electrical conductivity was measured. In this measurement a gradient along length of the prepared crystalline ingot was observed. The structures were characterized by XRD system. The obtained results for compositional variation (Bi2Se3 distribution function) were in good agreement with tentative value of the thermoelectric power measured along the crystal growth. The experimental processes were analytically simulated. Simulation of the growth confirms that, Bi2Se3 concentration of Bi2Te3-Bi2Se3 quasi binary solid solution system was eminent.

Keywords

References

[1] Jain A. L., "Temperature Dependence of the Electrical Properties of Bismuth-Antimony Alloys", Phys. Rev, 114(6) (1959) 1518.

[2] Perrin D., Chitroub M., Scherer H., "Study of the n-type Bi2Te2.7Se0.3 doped with bromine impurity", Journal of Physics and chemistry of solids, 61 (2000) 1687-1891

[3] Sokolov O. B., Skipidarov S. Y., Duvankov N. I., Shabunina G. G., "Chemical reactions on the Bi2Te3–Bi2Se3 section in the process of crystal growth", Journal of Crystal Growth, 262 (2004) 442–448

[4] Yang J., Aizawa T., Yamamoto A., Ohta T., "Thermoelectric properties of n-type (Bi2Se3)x(Bi2Te3)1-x prepared by bulk mechanical alloying and hot pressing", Journal of Alloys and Compounds, 312 (2000) 326-330

[5] Yang J., Aizawa T., Yamamoto A., Ohta T., "Thermoelectric properties of p-type (Bi2Te3)x(Sb2Te3)1-x prepared via bulk mechanical alloying and hot pressing", Journal of Alloys and Compounds 309(2000) 225-228.

[6] Zhang H. T., Luo X. G., Wang C. H., Xiong Y. M., Li S. Y., Chen X. H., "Characterization of nanocrystalline bismuth telluride (Bi2Te3) synthesized by a hydrothermal method", Journal of Crystal Growth 265 (2004) 558–562

[7] Zou H., Rowe D. M., Min G., "Growth of p- and n-type bismuth telluride thin by co-evaporation", Journal of Crystal Growth 222 (2001) 82-87.

[8] Miyazaki Y., Kajitani T., "Preparation of Bi2Te3 films by electrodeposition", Journal of Crystal Growth 229 (2001) 542–546.

[9] Cherepanova T. A., Kuzovkov V. N., Journal of Crystal Growth, Volume 65, Issues 1-3, 1983, Pages 55-58.

[10] Boeck T., Rudolph P., J. Crystal Growth, 79, 1986. 105-109.

[11] Sell H. E., Muller G., J. Crystal Growth, 97, 1989.194.

[12] Sadik Dost1, Yongcai Liu, Brian Lent, 16ème Congrès Français de Mécanique Nice, 2003, France, 1-5 septembre,1-6.

[13] Kavei G. A., Karami M., Bull. Mater. Sci., Vol. 29, No. 7, 2006, 659–663.

[14] Kavei G., Khashachi A.A., Journal of thermoelectricity, No. 3, 2005, 40-45.

[15] Sze S. M., "Semiconductor Devices, physics and technology", (2002), John Wiley & Sons Inc.

[16] Kasap S. O., "Principle of Electronic Materials and Devices", Chapter 1, (2002), Mc Grow Hill.

[17] Cullity B. D., Stock S. R, Stock S., "Elements of X-ray Diffraction", 3rd Edition, Prentice Hall (2002).

Files

History

  • Receive Date: 02 July 2025
  • Revise Date: 04 February 2026
  • Accept Date: 02 July 2025

Share

How to cite

Statistics