بررسی چگونگی قرارگیری اتم‌های آلاینده Pt در شبکه‌ی تک بلور TaSe2 با روش ریتولد و انتقال تکانه

نوع مقاله : مقاله پژوهشی

نویسندگان

پژوهشکده فوتونیک و فناوری های کوانتومی، پژوهشگاه علوم و فنون هسته ای، تهران، ایران

10.22128/ijcm.2026.3134.1019

چکیده

در این پژوهش، تک بلورهای میزبان TaSe2 به روش شیمیایی بخار انتقالی تولید شده و اتم­های آلاینده Pt در مقادیر 0، 3، 6، 9، 12 و 15 درصد اتمی به شبکه اضافه شدند. نتایج بررسی­ها ساختار لایه­ای با درجه بلورین بالا و چند نوعی 2H را در همه­ی نمونه­ها نشان داد که نشانگر حفظ ساختار بلوری شبکه میزبان صرف نظر از مقدار آلاینده Pt است. از سوی دیگر، تحلیل ریتولد نشان داد که ثابت­های a و c شبکه­ی ساختار لایه­ای TaSe2 هر دو با افزودن عنصر آلاینده Pt به شبکه در همه مقادیر افزایش می­یابند. این امر نشان می­دهد که عنصر آلاینده Pt بیشتر در فضای بین لایه­های دارای صفحه­ی ششگوشی که بصورت واندر والس به هم متصل هستند، در مکان های چاروجهی و هشت­وجهی وارد می­شود. 

کلیدواژه‌ها


عنوان مقاله [English]

Rietveld Analysis of the Pt intercalated 2H-TaSe2 Single Crystals

نویسندگان [English]

  • Seyed Mohammad Ali Radmanesh
  • Reza Ghanbari
Research Institute for Photonics and Quantum Technologies, Nuclear Science and Technology Research Institute, Tehran, Iran
چکیده [English]

In this work, high quality TaSe2 single crystals with Different amounts of Pt atoms were grown by a chemical vapor transport method. The Powder and single crystal X-ray diffraction were conducted to investigate the phase purity and structural characterization of as grown samples. The results using Rietveld analysis in conventional as well as quantum transfer Q parameter modes confirmed the 2H-TaSe2 in all samples with constantly increased of a and c unit cell parameters. This is firm evidence that the Pt atoms are intercalated in the host compounds successfully rather than being substituted by the Ta atoms in the crystalline structure. Thus, the dominant intercalation by occupying the tetrahedral and octahedral sites between the TaSe2 slabs will fill the van der wall gaps which further generate disorder in the lattice. This is a promising scenario to enhance electronic features of the 2H-TaSe2 single crystals.

کلیدواژه‌ها [English]

  • 2D Structures
  • Polytypism
  • Rietveld analysis
  • Van der Walls gap
  • Intercalation by Pt atoms
[1] Rossnagel K., “On the origin of charge-density waves in select layered transition metal dichalcogenides”, J. Phys. Condens. Matter 23 (21) (2011) 213001–213024.
[2] Nakashizu T., Sekine T., Uchinokura K., Matsuur E., “Raman, Study of charge density-wave excitations in 4Hb-TaS2”, Phys. Rev. B 29 (1984) 3090–3095.
[3] Hajiyev P., Cong C., Qiu C., Yu T., “Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2, Sci”, Rep. 3 (2013) 2593–2598.
[4] Barnett R.L., Polkovnikov A., Demler E., “Wei-Guo Yin, Wei Ku, Coexistence of gapless excitations and commensurate charge-density wave in the 2H transition metal dichalcogenides”, Phys. Rev. Lett. 96 (2006) 026406.
[5] Mukhtar L.A., et al., “Tuning superconductivity and charge density wave order in TaSe2 through Pt intercalation”, Phys. Rev. B 107 (2023) 104510.
[6] Bhoi D. E., et al., “Interplay of charge density wave and multiband superconductivity in 2H-PdxTaSe2”, Sci. Rep. 6: 24068 DOI: 10.1038/srep24068.
[7] Patra C., et al. “Two Dimensional Multigap Superconductivity in Bulk 2H-TaSSe”, Phys. Rev. B106       (2022) 134515.
[8] Zhu X., et al., “Single crystal growth of PtSe2 via CuSe flux method and its large magneto-resistance”, Journal of Alloys and Compounds 785 (2019) 871e874.
[9] Tymoshenko Y., et al., “Charge-density-wave quantum critical point under pressure in 2H-TaSe2”, Communication Physics. 8 (2025) 352.
[10] Sur Y., et al., “Enhanced superconductivity near a pressure-induced quantum critical point of strongly coupled charge density wave order in 2H-Pd0.05TaSe2”, NPG Asia Materials. 17 (2025) 8.
[11] Koley S. , “Intercalation in 2H-TaSe2 for modulation of electronic properties and electrochemical energy storage”, Physica B: Condensed Matter. 669 (2023) 415312.
[12] Brenna C., Bierman, et al., “Superconducting Sn-Intercalated TaSe2: Structural Diversity Obscured by Routine Characterization Techniques”, J. Am. Chem. Soc. 147 (2025) 39093-39102.
[13] Zhang Z., et al,.” Interlayer Chemical Modulation of Phase Transitions in Two-Dimensional Metal Chalcogenides”, Molecules (28) 2023, 959.
[14] Wojciech R., Pudelko et al., “Probing enhanced superconductivity in van der Waals polytypes of VxTaS2”, Physical Review Materials 8 (2024) 104802.
[15] Wu Y., et al., “Ion intercalation engineering of electronic properties of two-dimensional crystals of 2H-TaSe2”, Physical Review Materials 3 (2019) 104003.
[16] Luo H., et al., “Polytypism, polymorphism, and superconductivity in TaSe2-xTex”, Proceedings of the National Academy of Sciences of the United States of America 112 (2015) E1174–E1180.
[17] Sidoumou M., et al., “X-ray diffraction and theoretical study of the transition 2H-3R polytypes in Nb1+xSe2 (0 < x < 0.1)”, PeerJ Inorganic Chemistry 3 (2021) e2.
[18] Vogel E. R., et al., “Two-dimensional layered transition-metal dichalcogenides for versatile properties and applications”, MRS Bulletin 40 (2015) 558–563.
[19] Bhoi D. E., et al., “Interplay of charge density wave and multiband superconductivity in 2H-PdxTaSe2”, Sci. Rep. 6:24068 DOI: 10.1038/srep24068.
[20] Gronvold F., Rost E., “The crystal structure of PdSe2 and PdS2”, Acta Crystallogr. 10 (1957) 329.
[21] Xiao Chen L., et al., “Spontaneous self-intercalation of copper atoms into transition metal dichalcogenides”, Science Advances 6 (2020) eaay4092.
[22] Pervin G. R., et al., “Study of transport properties in Se deficient and Fe-intercalated NbSe2 single crystals: experiment and theory”, Journal of Materials Science 55 (2020) 250–262.
 
 
[23] Hossain M., et al., “Recent advances in two-dimensional materials with charge density waves: synthesis”, characterization and applications. Crystals 7 (2017) 298.
[24] Lin D., “Patterns and driving forces of dimensionality dependent charge density waves in 2H-type transition metal dichalcogenides”, Nature Communications