The effect of annealing and thickness on optical and electrical properties of Cs2AgBiI6 layer prepared by thermal evaporation method as an absorber material for lead-free perovskite solar cells

Document Type : Original Article

Authors

Photonics Research Group, Yazd University, Yazd, Iran

Abstract

Bismuth-based lead-free perovskites are considered as a promising alternative to lead perovskite, whose toxicity and instability are a major challenge in their commercialization. However, lead-free provskites are strongly restricted by low efficiency due to the high band gap and poor quality of layer formation in perovskite solar cells. In this research, the double perovskites Cs2AgBiI6 has been synthesized from solution-based synthesis heating under reflux and then the film was deposited on mp-TiO2 substrate by thermal evaporation method. The effects of annealing and thickness on the optical and electrical properties of deposited layer were investigated for using as absorber layer in perovskite solar cells. The optimal thermal annealing temperatures (250 °C) would significantly extended the wide absorption range up to 650 nm and reduces appreciable direct band gap of 1.92 eV. The results from analysis of the current density–voltage and photoluminescence spectra, show that the best power conversion efficiency of 0.9% obtained at optimal condition of 250 °C annealing temperature and 400 nm thickness of Cs2AgBiI6 film for using in mesostructure lead-free perovskite solar cells. These optimal conditions are clearly consistent with the charge transfer characteristics and stability of the samples.

Keywords


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