بررسی اثر بازپخت و ضخامت لایه جاذب Cs2AgBiI6 تهیه شده به روش تبخیر گرمایی بر عملکرد سلول‌های خورشیدی پروسکایتی بدون سرب

نوع مقاله : مقاله پژوهشی

نویسندگان

گروه پژوهشی فوتونیک، دانشکده فیزیک، دانشگاه یزد، یزد، ایران

چکیده

پروسکایت‌های بدون سرب بر پایه بیسموت به‌عنوان یک جایگزین امیدوارکننده برای پروسکایت­های هالید سرب، که سمی بودن و ناپایداری آن‌ها یک چالش بزرگ برای تجاری‌سازی آن‌هاست، در نظر گرفته شده‌اند. با این‌حال، پروسکایت‌های بدون سرب به دلیل گاف انرژی بزرگ و کیفیت نامطلوب لایه نشانی، همچنان دارای مشکل بازده کم هستند. در این پژوهش، پروسکایت دوکاتیونی Cs2AgBiI6 با پایداری به نسبت خوب با یک فرآیند تقطیر ساده با موفقیت سنتز شده و سپس به روش تبخیر گرمایی بر بستر متخلخل TiO2 لایه‌نشانی گردید. اثر بازپخت و همچنین اثر ضخامت لایه پروسکایت تشکیل‌شده، به عنوان لایه جاذب در سلول خورشیدی پروسکایتی، بر ویژگی‌های نوری و الکتریکی آن بررسی شد. گاف انرژی مستقیم Cs2AgBiI6 در اثر بازپخت در دمای  oC250 برابر eV 92/1 شد و گستره جذب گسترده‌ای تا حدود nm 650 نشان داده شد. منحنی‌های مشخصه چگالی جریان-ولتاژ و طیف نورتابی سلول‌های خورشیدی متخلخل ساخته‌شده با لایه جاذب پروسکایتی Cs2AgBiI6 نشان می‌دهند که با دمای بازپخت °C250 و ضخامت nm 400 بازده سلول به مقدار بهینه 9/0%  می‌رسد. این شرایط بهینه آشکارا با مشخصه‌های انتقال بار و پایداری نمونه‌ها نیز همخوانی دارد.

کلیدواژه‌ها

عنوان مقاله [English]

The effect of annealing and thickness on optical and electrical properties of Cs2AgBiI6 layer prepared by thermal evaporation method as an absorber material for lead-free perovskite solar cells

نویسندگان [English]

  • Ali Karimi Zarchi
  • Abbas Behjat
  • Hojjat Amrollahi Bioki
Photonics Research Group, Yazd University, Yazd, Iran
چکیده [English]

Bismuth-based lead-free perovskites are considered as a promising alternative to lead perovskite, whose toxicity and instability are a major challenge in their commercialization. However, lead-free provskites are strongly restricted by low efficiency due to the high band gap and poor quality of layer formation in perovskite solar cells. In this research, the double perovskites Cs2AgBiI6 has been synthesized from solution-based synthesis heating under reflux and then the film was deposited on mp-TiO2 substrate by thermal evaporation method. The effects of annealing and thickness on the optical and electrical properties of deposited layer were investigated for using as absorber layer in perovskite solar cells. The optimal thermal annealing temperatures (250 °C) would significantly extended the wide absorption range up to 650 nm and reduces appreciable direct band gap of 1.92 eV. The results from analysis of the current density–voltage and photoluminescence spectra, show that the best power conversion efficiency of 0.9% obtained at optimal condition of 250 °C annealing temperature and 400 nm thickness of Cs2AgBiI6 film for using in mesostructure lead-free perovskite solar cells. These optimal conditions are clearly consistent with the charge transfer characteristics and stability of the samples.

کلیدواژه‌ها [English]

  • annealing
  • Cs2AgBiI6 double perovskite
  • Lead-free perovskite solar cell
  • Thermal evaporation deposition

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مجله بلورشناسی و کانی شناسی ایران
دوره 32، شماره 1 - شماره پیاپی 93
فروردین 1403
صفحه 179-194

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  • تاریخ دریافت: 18 تیر 1402
  • تاریخ بازنگری: 13 مرداد 1402
  • تاریخ پذیرش: 29 مهر 1402

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