اثر دمای بستر بر لایه‌‌های نازک اکسید مولیبدن تهیه شده به روش افشانه گرمایی در دیود

نوع مقاله : مقاله پژوهشی

نویسندگان

دانشکده فیزیک، دانشگاه دامغان، دامغان، ایران

چکیده

در این پژوهش، دیودها با لایه نشانی لایه نازک اکسید مولیبدن بر بستر سیلیکون آلایش شده نوع p < /span> با هدف بررسی اثر دمای بستر بر ویژگی دیود ساخته شدند. به این منظور، لایه‌های نازک اکسید مولیبدن در بسترهای با دمای 350، 400، 450 و  oC 500 به روش افشانه گرمایی لایه­نشانی شدند. ویژگی­های ساختاری و نوری لایه­های نازک بررسی گردید. آنها ماهیتی بسبلوری با ساختار راست­گوشی و قله­های پراشی مربوط به صفحه­های (020)، (040) و (060) را نشان می­دهند که قله ارجح در همه نمونه­ها (040) است. ریختار سطح نمونه­ها بدون ترک و دارای دانه­بندی مستطیل شکل با اندازه دانه­های در گستره 110 تا 210 نانومتر است. همچنین زبری متوسط سطح آنها در گستره 157 تا 167 نانومتر اندازه­گیری شد. گاف نوری نمونه­ها در گستره­ 84/2 تا eV 95/2 برآورد شد. نمودار ولتاژ – جریان نمونه­ها رفتار دیودی آنها را نشان داد. دیود ساخته شده در دمای بستر oC400 دارای کمترین ولتاژ آستانه است.

کلیدواژه‌ها

عنوان مقاله [English]

The effect of substrate temperature on the preparation of molybdenum oxide thin films by spray pyrolysis method used in diode

نویسندگان [English]

  • Mojtaba Ataei
  • Mohammad Reza Fadavieslam Fadavieslam
School of Physics, Damghan University, Damghan, Iran.
چکیده [English]

In this research, the diodes were made using a thin films of molybdenum oxide on the doped P-type silicon substrate with the aim of studying the effect of the substrate temperature on the characteristics of the diode. For this purpose, thin films of molybdenum oxide were deposited on the substrate at substrate temperatures of 350, 400, 450 and 500 ˚C by spray pyrolysis. The structural and optical properties of the thin films were characterized. They show a fairly crystalline nature with a straight structure and peaks corresponding to (020), (040) and (060) planes, with the preferred peak being (040) in all samples. The shape of the surface of the samples is without cracks and has a rectangular granulation with the size of the grains in the range of 110 to 210 nm. Also, their average surface roughness was measured in the range of 157 to 167 nm. The optical gap of the samples was estimated in the range of 2.84 to 2.95 eV. The voltage-current diagram of the samples showed their diode behavior. The diode made at 400 ˚C substrate temperature has the lowest threshold voltage.

کلیدواژه‌ها [English]

  • Molybdenum oxide
  • thin film
  • Spray Pyrolysis
  • p-n junction diode

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  • تاریخ دریافت: 22 اسفند 1401
  • تاریخ بازنگری: 11 خرداد 1402
  • تاریخ پذیرش: 24 تیر 1402

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