Growth and characterization of PIN-PMN-PT piezoelectric single crystal and wafer fabrication in the [001] crystallographic direction using Laue X-ray crystallography

Document Type : Original Article

Authors

faculty of Applied science, Malek Ashtar University of Technology, Isfahan, Iran

Abstract

In this paper, PIN-PMN-PT piezoelectric single crystal with the chemical composition of 24[Pb(Nb1/2In1/2)O3]-42[Pb(Mg1/3Nb2/3)O3-34PbTiO3, with a diameter of 2 and a length of 8 cm was grown using the Bridgman growth method. Since the piezoelectric response of single crystals depends on their crystallographic orientation, the crystalography of single crystal ingots is of great importance. As grown single crystal ingot was completely investigated using X-ray diffraction by the Laue and XRD methods.The results showed that the obtained crystal was grown as a uniform single crystal along the [201] crystallographic direction. The appropriate rotation angles for manufacturing items along the preferred crystallographic direction [001] were extracted from the laue results, and single crystal pieces were cut from the ingot.The Curie temperature of the single crystal sample was 155 °C, which was extracted by measuring the dielectric constant curve as a function of temperature. The grown single crystal had a piezoelectric charge coefficient of 1090 pC/N, electromechanical coupling factor of 0.49, and mechanical quality factor of 135. The piezoelectric parameters of the grown single crystal have very large values ​​compared to conventional ceramics used in piezoelectric applications.

Keywords


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