Characterization and Fabrication of Multilayers
of A1xGal_xAs/GaAs by Epitaxy
Abstract
Five layers of GaAs:Te(n=2x 1018 cm' Alo.4GaQ.6As:
Sn(n=5xWI6 em,3}. GaAs, Alo .• GaQ.6As: Ge(p=3xW17 em-3),
GaM: GC(p= IXlO18cm 3) were grown by supercooled Liquid
Phase Epilaxy on n-GaAs(IOO) substrate. The cooling rate of the
furnace was SCI up With U. I"C/min al T=860°C. The firSI layer
was grown at T=840°C and Ihe la sl one at T=827°C. The
thi ckness were varied between 0.1 10 8,um by controlling the
supercooling IcmperalUre and growth time. Quality and quantilY
of epitaxial layers were examined by TEM, SEM, PIXE and x-ray,
(2025). Characterization and Fabrication of Multilayers
of A1xGal_xAs/GaAs by Epitaxy. Iranian Journal of Crystallography and Mineralogy, 3(1), 3-14.
MLA
. "Characterization and Fabrication of Multilayers
of A1xGal_xAs/GaAs by Epitaxy", Iranian Journal of Crystallography and Mineralogy, 3, 1, 2025, 3-14.
HARVARD
(2025). 'Characterization and Fabrication of Multilayers
of A1xGal_xAs/GaAs by Epitaxy', Iranian Journal of Crystallography and Mineralogy, 3(1), pp. 3-14.
VANCOUVER
Characterization and Fabrication of Multilayers
of A1xGal_xAs/GaAs by Epitaxy. Iranian Journal of Crystallography and Mineralogy, 2025; 3(1): 3-14.
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