[1] Herima H., "Properties of GaN and related compounds studied by means
of Raman scattering", J. Phys. Condens. Matter, Vol. 14 (2002) PP. 967.
[2] Bergman L., Nemanich R.J., "Raman spectroscopy for characterization
of hard wide band gap emiconductors diamond, GaN, GaAlN, AlN, BN",
Annu. Rev. Matter. Sci., Vol. 26 (1996) PP. 551.
[3] Farjami Shayesteh S., Dumelow T., Parker T.J., Mirjalili G., Vorobjev
L.E., Donetsky D.V., Kastalsky A., "Far-infrared spectra of reflectivity,transmition and hot-hol emission in p-doped GaAs/Al0.5Ga0.5As multi
quantum well", Semicond. Sci.Technol., Vol. 11 (1996) PP. 323.
[4] Dumelow T., Parker T.J., Smith S.R.P., Tilley D.R., "Surface Science
Reports", North-Holland (1993).
[5] Yang T.R., Dvoynenko M.M., Cheng Y.F., "Far-IR investigation of thin
InGaN layers", Phisica. B, Vol. 324 (2002) PP. 268.
[6] Kaczmarczyk G., Kaschner A., Reich S., Hoffmann A., Thomsen C.,
"Lattice dynamics of hexagonal and cubic InN: Raman-scattering
experiments and calculations", Appl Phys. Lett., Vol. 76 (2000) PP. 2122.
[7] Mirjalili G., Dumelow T., Parker T.J., Farjami Shayesteh S., Cheng T.S.,
Foxon C.T., Jenkins L.C., Lacklinson D.E., "Far infrared spectroscopy of
thin epitaxial layers of GaN deposited by molecular beam epitaxy on GaP
substrate" Infrared Physics & Thechnology, Vol. 37 (1996) PP. 389.
[8] Dumelow T., Tilley D.R., "Optical properties of semiconductor and
superlattices in the far infrared", Opt. Soc. Am. A, Vol. 10, No. 4 (1993)
PP. 633.
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