نوع مقاله : مقاله پژوهشی
نویسندگان
1 گروه مهندسی برق، دانشکده مهندسی، دانشگاه فردوسی مشهد، مشهد، ایران
2 دانشکده فیزیک، دانشگاه دامغان، دامغان، ایران
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
In this study, sulfur-doped molybdenum oxide thin films were prepared by spray pyrolysis technique at a substrate temperature of 400 °C with different molar ratios. Then, the samples were annealed in the presence of sulfur vapor at a temperature of 450 °C. The structural, optical, and dielectric properties of the films were investigated using X-ray diffraction, scanning electron microscopy, and optical absorption spectroscopy, and the absorption coefficient, refractive index, real and imaginary parts of the dielectric constant, and dielectric loss tangent were measured. This study shows that annealed films in the presence of sulfur have a crystalline state with a preferred peak (002) corresponding to the MoS2 composition. The direct energy gap before annealing was in range of 2.19-2.97 eV and after annealing was 1.28-1.55 eV. Changes in the refractive index and dielectric constant indicate a dielectric behavior at wavelengths greater than 700 nm and metallic behavior at shorter wavelengths.
کلیدواژهها [English]
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